PPT Slide

inlet

port

wafer

pump

port

Inlet Flow:

400 sccm He

100 sccm NF3

Boundary Conditions

Twafer = 200 C

Twalls = 30 C

P = 2 Torr

CCP parallel

electrodes

(500 W)

CCP SIMULATION: The Standard GEC Reference Cell Geometry is Computed During Oxide Etching

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